NXP Semiconductors is a publicly traded multinational company that designs, develops, and manufactures a wide range of semiconductors and integrated circuits for various applications, including automotive, industrial, communications, and consumer markets. N-channel enhancement mode Logic level TrenchMOS transistor N-channel enhancement mode TrenchMOS transistor array The resistor R1 is the Gate resistor.N-channel enhancement mode TrenchMOS transistorĭual N-channel enhancement mode TrenchMOS transistor The below image is showing the standard switching application of the N-Channel MOSFET.Īpply the Gate voltage to control the Load.

Choose low R DS(on) resistance for the high current application for lower heat dissipations.

STD20NF06LT works up to 24A of Drain current (I D). Choose a MOSFET that could tolerate more than the Drain current that is actually required for the application. STD20NF06LT supports 60V Drain to Source supply voltage (V DSS).

Calculate the maximum Drain to Source voltage that is required for the application.

Choose the MOSFET type that is required for the application.

The low R DS(on) provides very low power dissipation over the high current application and thus eliminates the additional use of a heatsink in a high current application where the PCB copper area can be utilized as the standard heatsink for the MOSFET. The below graph is useful to distinguish the drain current vs gate voltage specification. 040 Ohms R DS(on) resistance MOSFET useful for high power and switching applications. The STD20NF06 is an N-Channel 60V V DSS, 24A I D, with less than 0. Note: Complete technical details can be found in the STD20NF06 Datasheet linked at the bottom of this page.

Peak diode recovery avalanche energy (dv/dt) 10V/ns.It has up to 24A of drain current.ĭrain pin of the MOSFET (It is also connected with the TAB)įeatures and Specification of STD20NF06 MOSFET It provides rugged avalanche characteristics, thus suitable for switchable applications.

This Power MOSFET offers the latest development of STMicroelectronics unique “Single Feature SizeTM'' strip-based process. It has very low R DS(on) resistance, less than 0.040 Ohms. STD20NF06 is an avalanche tested N-Channel MOSFET from STMicroelectronics.

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